Wafer-Level Etch Spatial Profiling for Process Monitoring from Time-Series with Time-LLM

ArXi:2603.23576v1 Announce Type: cross Understanding wafer-level spatial variations from in-situ process signals is essential for advanced plasma etching process monitoring. While most data-driven approaches focus on scalar indicators such as average etch rate, actual process quality is determined by complex two-dimensional spatial distributions across the wafer. This paper presents a spatial regression model that predicts wafer-level etch depth distributions directly from multichannel in-situ process time series.